MJD45H11T4
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Specification
RoHS | yes |
Installation style | SMD/SMT |
Package / case | TO-252-3 |
Transistor polarity | PNP |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 80 V |
Collector-base voltage VCBO | 80 V |
Emitter-base voltage VEBO | 5 V |
Collector - emitter saturation voltage | 1 V |
Maximum DC collector current | 16 A |
The maximum working temperature | + 150 C |
Series | MJD45H11T4 |
Continuous collector current | 8 A |
DC collector / Base Gain hfe Min | 60 |
Height | 2.4 mm (Max) |
Length | 6.6 mm (Max) |
Minimum working temperature | - 55 C |
Pd - Power Dissipation | 20 W |
Factory packing quantity | 2500 |
Width | 6.2 mm (Max) |
Unit weight | 1.800 g |
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