TISP61089BDR-S
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Specification
RoHS | yes |
Series | TISP61089B |
The maximum turning current IBO | 6.5 A |
Rated repeat OFF state voltage VDRM | - 170 V |
Off-state leakage current (under VDRM IDRM) | 5 uA |
On state RMS current - It RMS | - |
Vf - forward voltage | 3 V |
Gate trigger voltage -Vgt | 2.5 V |
Gate trigger current -Igt | 5 mA |
Maintain current Ih maximum | - 150 mA |
Minimum working temperature | - 40 C |
The maximum working temperature | + 85 C |
Installation style | SMD/SMT |
Package / case | SOIC-8 |
Transition current VBO | - 112 V |
Compliance | UL |
Current rating | - 5 uA |
Height | 1.55 mm |
Length | 5 mm |
Do not repeat on-state current | 6.5 A |
Product | SCRs |
Types | Dual Forward Conducting P-Gate Thyristors |
Width | 4 mm |
Unit weight | 135 mg |
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