TISP6NTP2CDR-S
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Specification
RoHS | yes |
Series | TISP6NTP2C |
The maximum turning current IBO | 7 A |
Rated repeat OFF state voltage VDRM | - 170 V |
Off-state leakage current (under VDRM IDRM) | 5 uA |
On state RMS current - It RMS | - |
Vf - forward voltage | 3 V |
Gate trigger voltage -Vgt | 2.5 V |
Gate trigger current -Igt | 5 mA |
Maintain current Ih maximum | - 150 mA |
Minimum working temperature | - 40 C |
The maximum working temperature | + 85 C |
Installation style | SMD/SMT |
Package / case | SO-8 |
Transition current VBO | - 112 V |
Current rating | - 5 uA |
Height | 1.55 mm (Max) |
Length | 5 mm (Max) |
Do not repeat on-state current | 7 A |
Product | SCRs |
Factory packing quantity | 2500 |
Types | Quad Forward Conducting P-Gate Thyristors |
Width | 4 mm (Max) |
Unit weight | 506.600 mg |
Others include "TISP6NTP2CDR-S" parts
The following parts include 'TISP6NTP2CDR-S'
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