C4D10120A
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Specification
RoHS | yes |
Product | Schottky Silicon Carbide Diodes |
Installation style | Through Hole |
Package / case | TO-220-2 |
If - Forward current | 10 A |
Vrrm - repeat the reverse voltage | 1.2 kV |
Vf - forward voltage | 1.8 V |
Ifsm - Forward Surge Current | 71 A |
Configuration | Single |
Technology | SiC |
Ir - Reverse current | 250 uA |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Range of working temperature | - 55 C to + 175 C |
Pd - Power Dissipation | 136 W |
Factory packing quantity | 50 |
trr - Reverse recovery time | - |
Types | - |
Unit weight | 6 g |
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