DMN4010LFG-7
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | PowerDI3333-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - continuous drain current | 11.5 A |
Rds On - Drain-Source On-Resistance | 12 mOhms |
Vgs th - gate-source threshold voltage | 1 V to 3 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 17 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Pd - Power Dissipation | 2.45 W |
Series | DMN40 |
Factory packing quantity | 2000 |
Transistor type | 1 N-Channel |
Unit weight | 72 mg |
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