SD1440-002L
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Specification
RoHS | yes |
Product | Phototransistors |
Package / case | Metal Can |
Installation style | Through Hole |
Peak wavelength | 935 nm |
Collector - Emitter maximum voltage VCEO | 30 V |
暗电流 | 100 nA |
Rise Time | 15 us |
Fall time | 15 us |
Pd - Power Dissipation | 75 mW |
Minimum working temperature | - 55 C |
The maximum working temperature | + 125 C |
集电极—射极击穿电压 | 30 V |
Collector - emitter saturation voltage | 0.4 V |
半强度角度 | 24 deg |
Height | 3.1 mm |
Length | 2.41 mm |
弱电流 | 1.5 mA |
Factory packing quantity | 100 |
Types | Photodetector Transistors |
Wavelength | 935 nm |
Width | 2.41 mm |
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