SDP8406-002
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Specification
RoHS | yes |
Product | Phototransistors |
Package / case | Side Looker |
Installation style | Through Hole |
Peak wavelength | 880 nm |
Collector - Emitter maximum voltage VCEO | 30 V |
暗电流 | 100 nA |
Rise Time | 15 us |
Fall time | 15 us |
Pd - Power Dissipation | 100 mW |
Minimum working temperature | - 40 C |
The maximum working temperature | + 85 C |
集电极—射极击穿电压 | 30 V |
Collector - emitter saturation voltage | 0.4 V |
半强度角度 | 50 deg |
Height | 5.72 mm |
Length | 4.45 mm |
Lens color / type | Clear |
弱电流 | 3.6 mA |
Factory packing quantity | 100 |
Types | Photodetector Transistors |
Wavelength | 880 nm |
Width | 2.28 mm |
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