SDP8406-004
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Specification
RoHS | yes |
Product | Phototransistors |
Package / case | Side Looker |
Installation style | Through Hole |
Peak wavelength | 935 nm |
Collector - Emitter maximum voltage VCEO | 30 V |
Dark current | 100 nA |
Rise Time | 15 us |
Fall time | 15 us |
Pd - Power Dissipation | 100 mW |
Minimum working temperature | - 40 C |
The maximum working temperature | + 85 C |
Collector - emitter breakdown voltage | 30 V |
Collector - emitter saturation voltage | 0.4 V |
Half strength angle | 50 deg |
Height | 5.72 mm |
Length | 4.45 mm |
Lens color / type | Clear |
Weak current | 12 mA |
Factory packing quantity | 100 |
Types | Photodetector Transistors |
Wavelength | 880 nm |
Width | 2.28 mm |
Others include "SDP8406-004" parts
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