IXTT10P60
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-268-3 |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 600 V |
Id - continuous drain current | - 10 A |
Rds On - Drain-Source On-Resistance | 1 Ohms |
Series | IXTT10P60 |
Factory packing quantity | 30 |
Unit weight | 4.500 g |
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