IXTT74N20P
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-268-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 200 V |
Id - continuous drain current | 74 A |
Rds On - Drain-Source On-Resistance | 34 mOhms |
Vgs th - gate-source threshold voltage | 5 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 107 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 21 ns |
Forward transconductance - minimum | 30 S |
Height | 5.1 mm |
Length | 14 mm |
Pd - Power Dissipation | 480 W |
Rise Time | 21 ns |
Series | IXTT74N20 |
Factory packing quantity | 30 |
Transistor type | 1 N-Channel |
Types | PolarHT Power MOSFET |
Typical shutdown delay time | 60 ns |
Typical turn-on delay time | 23 ns |
Width | 16.05 mm |
Unit weight | 4.500 g |
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The following parts include 'IXTT74N20P'
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