IXYP8N90C3D1
Manufacturer:
Mfr. Part #:
--
Allchips #:
F004-IXYP8N90C3D1-775-A-0000-X-N
Description:
IGBT 900 V 20 A 125 W Through Hole TO-220-3
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Specification
Package / case | TO-220-3 |
Installation style | Through Hole |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 900 V |
Collector - emitter saturation voltage | 2.15 V |
Gate / emitter maximum voltage | 30 V |
Continuous collector current at 25 ° C | 20 A |
Pd - Power Dissipation | 125 W |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Series | IXYP8N90 |
Collector maximum continuous current Ic | 20 A |
Gate-emitter leakage current | 100 nA |
Factory packing quantity | 50 |
Technology | Si |
Unit weight | 6 g |
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