IDH09G65C5XKSA2
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Specification
RoHS | yes |
Product | Schottky Silicon Carbide Diodes |
Installation style | Through Hole |
Package / case | TO-220-2 |
If - Forward current | 9 A |
Vrrm - repeat the reverse voltage | 650 V |
Vf - forward voltage | 1.5 V |
Ifsm - Forward Surge Current | 75 A |
Configuration | Single |
Technology | SiC |
Ir - Reverse current | 0.45 uA |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Pd - Power Dissipation | 82 W |
Factory packing quantity | 500 |
Vr - reverse voltage | 650 V |
Unit weight | 2 g |
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