IKW75N65ES5XKSA1
Manufacturer:
Mfr. Part #:
--
Allchips #:
F002-IKW75N65ES5XKSA1-1-A-2011-X-N
Description:
Trans IGBT Chip N-CH 650V 80A 395000mW 3-Pin(3+Tab) TO-247 Tube
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Specification
RoHS | yes |
Package / case | TO-247-3 |
Installation style | Through Hole |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 650 V |
Collector - emitter saturation voltage | 1.42 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 80 A |
Pd - Power Dissipation | 395 W |
Minimum working temperature | - 40 C |
The maximum working temperature | + 175 C |
Series | TRENCHSTOP 5 S5 |
Gate-emitter leakage current | 100 nA |
Height | 20.7 mm |
Length | 15.87 mm |
Factory packing quantity | 240 |
Technology | Si |
Width | 5.31 mm |
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