IRFS41N15DPBF
In stock
- IRFS41N15DPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-252-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 150 V |
Id - continuous drain current | 41 A |
Rds On - Drain-Source On-Resistance | 45 mOhms |
Vgs th - gate-source threshold voltage | 5.5 V |
Vgs - gate-source voltage | 30 V |
Qg - gate charge | 72 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 14 ns |
Forward transconductance - minimum | 18 S |
Height | 2.3 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 3.1 W |
Rise Time | 63 ns |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Types | HEXFET Power MOSFET |
Typical shutdown delay time | 25 ns |
Typical turn-on delay time | 16 ns |
Width | 6.22 mm |
Unit weight | 4 g |
Others include "IRFS41N15DPBF" parts
The following parts include 'IRFS41N15DPBF'
IRFS41N15DPBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRFS41N15DPBF
Infineon
Trans MOSFET N-CH 150V 41A 3-Pin(2+Tab) D2PAK Tube
Learn More >
-
- View All Newest Products from Omron