IRGS4B60KD1PBF
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Specification
RoHS | yes |
Technology | Si |
Package / case | TO-263-3 |
Installation style | SMD/SMT |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 2.1 V |
Gate / emitter maximum voltage | +/- 20 V |
Continuous collector current at 25 ° C | 11 A |
Pd - Power Dissipation | 63 W |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Series | RC |
Gate-emitter leakage current | 100 nA |
Height | 4.57 mm |
Length | 10.31 mm |
Factory packing quantity | 50 |
Width | 9.45 mm |
Unit weight | 260.400 mg |
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