SI4435DYPBF
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SO-8 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 30 V |
Id - continuous drain current | - 8 A |
Rds On - Drain-Source On-Resistance | 20 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 40 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single Quad Drain Triple Source |
Channel mode | Enhancement |
Fall time | 31 ns |
Height | 1.75 mm |
Length | 4.9 mm |
Pd - Power Dissipation | 2.5 W |
Rise Time | 17 ns |
Factory packing quantity | 95 |
Transistor type | 1 P-Channel |
Types | HEXFET Power MOSFET |
Typical shutdown delay time | 130 ns |
Typical turn-on delay time | 16 ns |
Width | 3.9 mm |
Unit weight | 506.600 mg |
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