MRF157
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Specification
RoHS | yes |
Transistor polarity | N-Channel |
Id - continuous drain current | 60 A |
Vds - Drain-Source Breakdown Voltage | 125 V |
Technology | Si |
Gain | 21 dB |
Output Power | 600 W |
The maximum working temperature | + 150 C |
Installation style | SMD/SMT |
Package / case | Case 368-03 |
Configuration | Single |
Minimum working temperature | - 65 C |
working frequency | 80 MHz |
Pd - Power Dissipation | 1350 W |
Factory packing quantity | 1 |
Types | RF Power MOSFET |
Vgs - gate-source voltage | +/- 40 V |
Vgs th - gate-source threshold voltage | 3 V |
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