APT43F60L
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-264-3 |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - continuous drain current | 45 A |
Rds On - Drain-Source On-Resistance | 150 mOhms |
Vgs th - gate-source threshold voltage | 4 V |
Vgs - gate-source voltage | 30 V |
Qg - gate charge | 215 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 44 ns |
Forward transconductance - minimum | 42 S |
Pd - Power Dissipation | 780 W |
Rise Time | 55 ns |
Factory packing quantity | 1 |
Typical shutdown delay time | 145 ns |
Typical turn-on delay time | 48 ns |
Unit weight | 10 g |
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