APT50GT60BRDQ2G
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Specification
RoHS | yes |
Technology | Si |
Package / case | TO-247-3 |
Installation style | Through Hole |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 600 V |
Collector - emitter saturation voltage | 2 V |
Gate / emitter maximum voltage | 30 V |
Continuous collector current at 25 ° C | 110 A |
Pd - Power Dissipation | 446 W |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Continuous collector current | 110 A |
Collector maximum continuous current Ic | 110 A |
Gate-emitter leakage current | 120 nA |
Height | 5.31 mm |
Length | 21.46 mm |
Range of working temperature | - 55 C to + 150 C |
Factory packing quantity | 1 |
Width | 16.26 mm |
Unit weight | 38 g |
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