APTGT400DU120G
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Specification
RoHS | yes |
Product | IGBT Silicon Modules |
Configuration | Dual |
Collector - Emitter maximum voltage VCEO | 1.2 kV |
Collector - emitter saturation voltage | 1.7 V |
Continuous collector current at 25 ° C | 560 A |
Gate-emitter leakage current | 800 nA |
Pd - Power Dissipation | 1.785 kW |
Package / case | SP6 |
The maximum working temperature | + 100 C |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | Screw |
Factory packing quantity | 1 |
Unit weight | 110 g |
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