APTGTQ200SK65T3G
Manufacturer:
Mfr. Part #:
--
Allchips #:
F002-APTGTQ200SK65T3G-834-A-1701-X-N
Description:
IGBT Power Module
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Specification
Product | IGBT Silicon Modules |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 650 V |
Collector - emitter saturation voltage | 1.65 V |
Continuous collector current at 25 ° C | 200 A |
Gate-emitter leakage current | 480 nA |
Pd - Power Dissipation | 483 W |
Package / case | SP3F |
The maximum working temperature | + 125 C |
Gate / emitter maximum voltage | +/- 20 V |
Minimum working temperature | - 40 C |
Installation style | Screw |
Factory packing quantity | 1 |
Technology | - |
Unit weight | 110 g |
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