ARF449BG
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Specification
RoHS | yes |
Transistor polarity | N-Channel |
Id - continuous drain current | 9 A |
Vds - Drain-Source Breakdown Voltage | 450 V |
Technology | Si |
Gain | 13 dB |
Output Power | 90 W |
The maximum working temperature | + 150 C |
Installation style | Through Hole |
Package / case | TO-247-3 |
Channel mode | Enhancement |
Fall time | 3 ns |
Forward transconductance - minimum | 3 mS |
Minimum working temperature | - 55 C |
working frequency | 120 MHz |
Range of working temperature | - 55 C to + 150 C |
Pd - Power Dissipation | 165 W |
Rise Time | 3.1 ns |
Factory packing quantity | 1 |
Types | RF Power MOSFET |
Vgs - gate-source voltage | 30 V |
Vgs th - gate-source threshold voltage | 5 V |
Unit weight | 38 g |
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