JAN2N3700
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Specification
RoHS | no |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-18-3 |
Transistor polarity | NPN |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 80 V |
Collector-base voltage VCBO | 140 V |
Emitter-base voltage VEBO | 7 V |
Collector - emitter saturation voltage | 0.5 V |
The maximum working temperature | + 200 C |
Continuous collector current | 1 A |
DC collector / Base Gain hfe Min | 15 |
DC current gain hFE maximum | 300 |
Minimum working temperature | - 65 C |
Pd - Power Dissipation | 1 W |
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