JAN2N930
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Specification
RoHS | no |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-18-3 |
Transistor polarity | NPN |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 45 V |
Collector-base voltage VCBO | 60 V |
Emitter-base voltage VEBO | 6 V |
Collector - emitter saturation voltage | 1 V |
Maximum DC collector current | 30 mA |
The maximum working temperature | + 200 C |
Minimum working temperature | - 55 C |
Pd - Power Dissipation | 300 mW |
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