VRF2933
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Specification
RoHS | yes |
Transistor polarity | N-Channel |
Id - continuous drain current | 42 A |
Vds - Drain-Source Breakdown Voltage | 180 V |
Technology | Si |
Gain | 25 dB |
Output Power | 300 W |
The maximum working temperature | + 150 C |
Forward transconductance - minimum | 8 mS |
Minimum working temperature | - 65 C |
working frequency | 30 MHz |
Range of working temperature | - 65 C to + 150 C |
Pd - Power Dissipation | 648 W |
Factory packing quantity | 1 |
Types | RF Power MOSFET |
Vgs - gate-source voltage | 40 V |
Vgs th - gate-source threshold voltage | 3.6 V |
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