TP2535N3-G
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-92-3 |
Number of channels | 1 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 350 V |
Id - continuous drain current | - 86 mA |
Rds On - Drain-Source On-Resistance | 25 Ohms |
Vgs - gate-source voltage | 20 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 10 ns |
Height | 5.33 mm |
Length | 5.21 mm |
Pd - Power Dissipation | 740 mW |
Product | MOSFET Small Signal |
Rise Time | 10 ns |
Factory packing quantity | 1000 |
Transistor type | 1 P-Channel |
Types | FET |
Typical shutdown delay time | 20 ns |
Typical turn-on delay time | 10 ns |
Width | 4.19 mm |
Unit weight | 453.600 mg |
Others include "TP2535N3-G" parts
The following parts include 'TP2535N3-G'
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