VN2210N2
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Specification
RoHS | no |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-39-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 1.7 A |
Rds On - Drain-Source On-Resistance | 350 mOhms |
Vgs - gate-source voltage | 20 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 30 ns |
Height | 6.6 mm |
Length | 9.4 mm |
Pd - Power Dissipation | 6 W |
Rise Time | 10 ns |
Factory packing quantity | 500 |
Transistor type | 1 N-Channel |
Types | FET |
Typical shutdown delay time | 50 ns |
Typical turn-on delay time | 10 ns |
Width | 9.4 mm |
Unit weight | 1.109 g |
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