DFE252012F-1R0M=P2
In stock
- DFE252012F-1R0M=P2 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Series | DFE252012F |
Inductance | 1 uH |
Tolerance | 20 % |
Maximum DC current | 4.7 A |
Maximum DC resistance | 40 mOhms |
Minimum working temperature | - 40 C |
The maximum working temperature | + 125 C |
Product | Inductors |
Shield | Shielded |
Termination type | SMD/SMT |
Package / case | - |
Length | 2.5 mm |
Width | 2 mm |
Height | 1.2 mm |
Core material | Iron Powder |
Installation style | SMD/SMT |
Q minimum | - |
Self-resonant frequency | - |
Factory packing quantity | 3000 |
Test frequency | 1 MHz |
Types | Metal Alloy Inductors |
Others include "DFE252012F-1R0M=P2" parts
The following parts include 'DFE252012F-1R0M=P2'
- dfe252010r-h-2r2m=p
- dfe252012p-1r5m=p
- dfe252012f-1r0m=p
- dfe252010f-r47m=p
- dfe252012f-2r2m=p
- dfe252012p-3r3m=p
- dfe252010p-1r2m=p
- dfe252012p-r68m=p
- dfe252012pd-2r2m=p
- dfe252012pd-1r5m=p
- dfe252010p-2r2m=p
- dfe252010f-4r7m=p
- dfe252010p-1r0m=p
- dfe252010f-r68m=p
- dfe252010f-3r3m=p
- dfe252010r-h-1r5m=p
- dfe252012f-3r3m=p
- dfe252012f-8r2m=p
- dfe252010p-3r3m=p
- dfe252012f-6r8m=p
DFE252012F-1R0M=P2 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
DFE252012F-1R0M=P2
Murata
Inductor Power Chip Shielded Multi-Layer 1uH 20% 1MHz Metal 3.3A 40mOhm DCR 1008 T/R
Learn More >
-
-
-
DFE252012F-1R0M=P2
Murata
Inductor Power Chip Shielded Multi-Layer 1uH 20% 1MHz Metal 3.3A 40mOhm DCR 1008 T/R
Learn More >
-
-
-
DFE252012F-1R0M=P2
Murata
Inductor Power Chip Shielded Wirewound 1uH 20% 1MHz Metal 3.3A 0.04Ohm DCR 1008 T/R
Learn More >
-
-
-
DFE252012F-1R0M=P2
Murata
Inductor Power Chip Shielded Wirewound 1uH 20% 1MHz Metal 3.3A 0.04Ohm DCR 1008 T/R
Learn More >
-
-
-
DFE252012F-1R0M=P2
Murata
Inductor Power Chip Shielded Multi-Layer 1uH 20% 1MHz Metal 3.3A 40mOhm DCR 1008 T/R
Learn More >
-
-
-
DFE252012F-1R0M=P2
Murata
Inductor Power Chip Shielded Wirewound 1uH 20% 1MHz Metal 3.3A 0.04Ohm DCR 1008 T/R
Learn More >
-
-
-
DFE252012F-1R0M=P2
Murata
Inductor Power Chip Shielded Multi-Layer 1uH 20% 1MHz Metal 3.3A 40mOhm DCR 1008 T/R
Learn More >
-
-
-
DFE252012F-1R0M=P2
Murata
Inductor Power Chip Shielded Wirewound 1uH 20% 1MHz Metal 3.3A 0.04Ohm DCR 1008 T/R
Learn More >
-
-
-
DFE252012F-1R0M=P2
Murata
Inductor Power Chip Shielded Wirewound 1uH 20% 1MHz Metal 3.3A 0.04Ohm DCR 1008 T/R
Learn More >
-
-
-
DFE252012F-1R0M=P2
Murata
Inductor Power Chip Shielded Multi-Layer 1uH 20% 1MHz Metal 3.3A 40mOhm DCR 1008 T/R
Learn More >
-
-
-
DFE252012F-1R0M=P2
Murata
Inductor Power Chip Shielded Wirewound 1uH 20% 1MHz Metal 3.3A 0.04Ohm DCR 1008 T/R
Learn More >
-
- View All Newest Products from Omron