AFT31150NR5
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Specification
RoHS | yes |
Transistor polarity | N-Channel |
Id - continuous drain current | 1.8 A |
Vds - Drain-Source Breakdown Voltage | - 0.5 V , + 65 V |
Technology | Si |
Gain | 17 dB |
Output Power | 150 W |
The maximum working temperature | + 150 C |
Installation style | SMD/SMT |
Package / case | OM-780-2L |
Minimum working temperature | - 40 C |
Number of channels | 1 Channel |
working frequency | 2700 MHz to 3100 MHz |
Pd - Power Dissipation | 741 W |
Series | AFT31150N |
Factory packing quantity | 50 |
Types | RF Power MOSFET |
Vgs - gate-source voltage | - 6 V, + 10 V |
Vgs th - gate-source threshold voltage | 1.2 V |
Unit weight | 3.081 g |
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