BF513,215
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Specification
RoHS | yes |
Transistor type | JFET |
Technology | Si |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Vgs - gate-source breakdown voltage | 20 V |
Id - continuous drain current | 30 mA |
Maximum drain / gate voltage | 20 V |
The maximum working temperature | + 150 C |
Pd - Power Dissipation | 250 mW |
Installation style | SMD/SMT |
Package / case | SOT-23 |
Configuration | Single |
Gate / source cut-off voltage | 3 V |
Height | 1 mm |
Length | 3 mm |
Product | RF JFET |
Rds On - Drain-Source On-Resistance | - |
Factory packing quantity | 3000 |
Types | JFET |
Width | 1.4 mm |
Unit weight | 8 mg |
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