BF556A,215
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Specification
RoHS | yes |
Transistor type | JFET |
Technology | Si |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs-栅源极击穿电压 | - 30 V |
Id - continuous drain current | 7 mA |
最大漏极/栅极电压 | - 30 V |
The maximum working temperature | + 150 C |
Pd - Power Dissipation | 250 mW |
Installation style | SMD/SMT |
Package / case | SOT-23 |
Configuration | Single |
闸/源截止电压 | - 0.5 V to - 7.5 V |
Height | 1 mm |
Length | 3 mm |
Product | RF JFET |
Rds On - Drain-Source On-Resistance | - |
Factory packing quantity | 3000 |
Types | JFET |
Width | 1.4 mm |
Unit weight | 8 mg |
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