BFU730LXZ
In stock
- BFU730LXZ Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
Product Category | 射频(RF)双极晶体管 |
Manufacturer | NXP |
RoHS | yes |
Transistor type | Bipolar Wideband |
Technology | SiGe |
Transistor polarity | NPN |
DC collector / Base Gain hfe Min | 205 |
Collector - Emitter maximum voltage VCEO | 10 V |
Emitter-base voltage VEBO | 1.3 V |
Continuous collector current | 5 mA |
The maximum working temperature | + 150 C |
Configuration | Single |
Installation style | SMD/SMT |
Package / case | SOT-883C-3 |
Trademark | NXP Semiconductors |
Maximum DC collector current | 30 mA |
Minimum working temperature | - 65 C |
working frequency | 53 GHz |
Output Power | 11.7 dBm |
Pd - Power Dissipation | 160 mW |
Factory packing quantity | 10000 |
Unit weight | 0.634 mg |
Others include "BFU730LXZ" parts
The following parts include 'BFU730LXZ'
BFU730LXZ Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BFU730LXZ
NXP Semiconductors
Trans RF BJT NPN 3V 0.03A 160mW 3-Pin DFN_C T/R
Learn More >
-
-
-
BFU730LXZ
NXP Semiconductors
Trans RF BJT NPN 3V 0.03A 160mW 3-Pin DFN_C T/R
Learn More >
-
-
-
BFU730LXZ
NXP Semiconductors
Trans RF BJT NPN 3V 0.03A 160mW 3-Pin DFN_C T/R
Learn More >
-
-
-
BFU730LXZ
NXP Semiconductors
RF Transistor NPN 3V 30mA 53GHz 160mW Surface Mount DFN1006C-3
Learn More >
-
-
-
BFU730LXZ
NXP Semiconductors
Trans RF BJT NPN 3V 0.03A 160mW 3-Pin DFN_C T/R
Learn More >
-
- View All Newest Products from Omron