2N7002BKW,115
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-323-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 310 mA |
Rds On - Drain-Source On-Resistance | 2.8 Ohms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 500 pC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Fall time | 7 ns |
Forward transconductance - minimum | 550 mS |
Pd - Power Dissipation | 830 mW |
Product | MOSFET Small Signal |
Rise Time | 6 ns |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
Types | Enhancement |
Typical shutdown delay time | 5 ns |
Typical turn-on delay time | 12 ns |
Unit weight | 5 mg |
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