2N7002P,215
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 360 mA |
Rds On - Drain-Source On-Resistance | 1.6 Ohms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 600 pC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 4 ns |
Height | 1 mm |
Length | 3 mm |
Pd - Power Dissipation | 350 mW |
Product | MOSFET Small Signal |
Rise Time | 4 ns |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 10 ns |
Typical turn-on delay time | 3 ns |
Width | 1.4 mm |
Unit weight | 8 mg |
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