NX2301P,215
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 20 V |
Id - continuous drain current | - 2 A |
Rds On - Drain-Source On-Resistance | 120 mOhms |
Qg - gate charge | 6 nC |
Forward transconductance - minimum | 4.7 S |
Pd - Power Dissipation | 400 mW |
Product | MOSFET Small Signal |
Factory packing quantity | 3000 |
Unit weight | 8 mg |
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