PMCPB5530X,115
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | DFN2020-6 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel, P-Channel |
Vds - Drain-Source Breakdown Voltage | 20 V |
Id - continuous drain current | 5.3 A |
Rds On - Drain-Source On-Resistance | 70 mOhms |
Vgs th - gate-source threshold voltage | 0.65 V, - 0.65 V |
Qg - gate charge | 14.4 nC, 8.1 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Dual |
Channel mode | Enhancement |
Fall time | 16 ns |
Pd - Power Dissipation | 8.33 W |
Rise Time | 15 ns |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel, 1 P-Channel |
Typical shutdown delay time | 40 ns |
Typical turn-on delay time | 4 ns |
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