PMDPB58UPE,115
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | DFN2020-6 |
Number of channels | 2 Channel |
Transistor polarity | P-Channel |
Vds - Drain-Source Breakdown Voltage | - 20 V, - 20 V |
Id - continuous drain current | - 4.5 A, - 4.5 A |
Rds On - Drain-Source On-Resistance | 58 mOhms, 58 mOhms |
Vgs th - gate-source threshold voltage | - 950 mV, - 950 mV |
Vgs - gate-source voltage | 8 V, 8 V |
Qg - gate charge | 9.5 nC, 9.5 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Dual |
Channel mode | Enhancement |
Fall time | 14 ns, 14 ns |
Forward transconductance - minimum | 9 S, 9 S |
Pd - Power Dissipation | 1.21 W |
Rise Time | 15 ns, 15 ns |
Factory packing quantity | 3000 |
Transistor type | 2 P-Channel |
Typical shutdown delay time | 41 ns, 41 ns |
Typical turn-on delay time | 7 ns, 7 ns |
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