2N5190G
In stock
- 2N5190G Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Installation style | Through Hole |
Package / case | TO-225-3 |
Transistor polarity | NPN |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 40 V |
Collector-base voltage VCBO | 40 V |
Emitter-base voltage VEBO | 5 V |
最大直流电集电极电流 | 4 A |
Gain Bandwidth Product fT | 2 MHz |
The maximum working temperature | + 150 C |
Series | 2N5190 |
直流集电极/Base Gain hfe Min | 25 |
Height | 11.04 mm (Max) |
Length | 7.74 mm (Max) |
Minimum working temperature | - 65 C |
Pd - Power Dissipation | 40 W |
Factory packing quantity | 500 |
Width | 2.66 mm (Max) |
Unit weight | 681 mg |
Others include "2N5190G" parts
The following parts include '2N5190G'
2N5190G Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
2N5190G
ON Semiconductor
Bipolar (BJT) Transistor NPN 40 V 4 A 2MHz 40 W Through Hole TO-126
Learn More >
-
-
-
2N5190G
ON Semiconductor
Trans GP BJT NPN 40V 4A 40000mW 3-Pin(3+Tab) TO-225 Box
Learn More >
-
- View All Newest Products from Omron