2N5302G
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Specification
RoHS | yes |
Installation style | Through Hole |
Package / case | TO-204-2 |
Transistor polarity | NPN |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 60 V |
Collector-base voltage VCBO | 60 V |
Collector - emitter saturation voltage | 0.75 V |
Maximum DC collector current | 30 A |
Gain Bandwidth Product fT | 2 MHz |
The maximum working temperature | + 150 C |
Series | 2N5302 |
Continuous collector current | 30 A |
DC collector / Base Gain hfe Min | 15 |
Height | 8.51 mm (Max) |
Length | 39.37 mm |
Minimum working temperature | - 65 C |
Pd - Power Dissipation | 200 W |
Factory packing quantity | 100 |
Width | 26.67 mm (Max) |
Unit weight | 12.020 g |
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