2N7002WT1G
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SC-70-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 310 mA |
Rds On - Drain-Source On-Resistance | 1.6 Ohms |
Vgs - gate-source voltage | 20 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 9 ns |
Height | 0.85 mm |
Length | 2.1 mm |
Pd - Power Dissipation | 280 mW |
Product | MOSFET Small Signal |
Rise Time | 9 ns |
Series | 2N7002W |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 55.8 ns |
Typical turn-on delay time | 12.2 ns |
Width | 1.24 mm |
Unit weight | 6.200 mg |
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