2SK3557-6-TB-E
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Specification
RoHS | yes |
Transistor type | JFET |
Technology | Si |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 15 V |
Vgs-栅源极击穿电压 | - 15 V |
Id - continuous drain current | 50 mA |
最大漏极/栅极电压 | - 15 V |
The maximum working temperature | + 150 C |
Pd - Power Dissipation | 200 mW |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Configuration | Single |
Forward transconductance - minimum | 35 mS |
闸/源截止电压 | - 0.7 V |
Product | RF JFET |
Series | 2SK3557 |
Types | JFET |
Unit weight | 8 mg |
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