2SK3666-2-TB-E
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - continuous drain current | 1.5 mA |
Rds On - Drain-Source On-Resistance | 200 Ohms |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Pd - Power Dissipation | 200 mW |
Series | 2SK3666 |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
Unit weight | 8 mg |
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