2SK3666-3-TB-E
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Specification
RoHS | yes |
Installation style | SMD/SMT |
Package / case | SC-59-3 |
Transistor polarity | N-Channel |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 30 V |
Vgs - gate-source breakdown voltage | - 30 V |
Leakage-source current at Vgs = 0 | 3 mA |
Id - continuous drain current | 10 mA |
Rds On - Drain-Source On-Resistance | 200 Ohms |
Pd - Power Dissipation | 200 mW |
The maximum working temperature | + 150 C |
Series | 2SK3666 |
Forward transconductance - minimum | 3 ms |
Gate / source cut-off voltage | - 1 nA |
Factory packing quantity | 3000 |
Types | JFET |
Unit weight | 8 mg |
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