2SK3703-1E
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Id - continuous drain current | 30 A |
Rds On - Drain-Source On-Resistance | 20 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 40 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Fall time | 144 ns |
Forward transconductance - minimum | 13 S |
Pd - Power Dissipation | 25 W |
Rise Time | 110 ns |
Series | 2SK3703 |
Factory packing quantity | 50 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 166 ns |
Typical turn-on delay time | 16.5 ns |
Unit weight | 6 g |
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