BCW65ALT1G
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Specification
RoHS | yes |
Installation style | SMD/SMT |
Package / case | SOT-23-3 |
Transistor polarity | NPN |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 32 V |
Collector-base voltage VCBO | 60 V |
Emitter-base voltage VEBO | 5 V |
Collector - emitter saturation voltage | 0.7 V |
Maximum DC collector current | 0.8 A |
Gain Bandwidth Product fT | 100 MHz |
The maximum working temperature | + 150 C |
Series | BCW65AL |
Continuous collector current | 0.8 A |
DC collector / Base Gain hfe Min | 35 |
Height | 0.94 mm |
Length | 2.9 mm |
Minimum working temperature | - 55 C |
Pd - Power Dissipation | 225 mW |
Factory packing quantity | 3000 |
Width | 1.3 mm |
Unit weight | 8 mg |
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