BD13716S
In stock
- BD13716S Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Installation style | Through Hole |
Package / case | TO-126-3 |
Transistor polarity | NPN |
Configuration | Single |
Collector - Emitter maximum voltage VCEO | 60 V |
Collector-base voltage VCBO | 60 V |
Emitter-base voltage VEBO | 5 V |
Collector - emitter saturation voltage | 0.5 V |
Maximum DC collector current | 1.5 A |
The maximum working temperature | + 150 C |
Series | BD137 |
Continuous collector current | 1.5 A |
DC collector / Base Gain hfe Min | 40 |
DC current gain hFE maximum | 160 |
Height | 1.5 mm |
Length | 8 mm |
Minimum working temperature | - 55 C |
Pd - Power Dissipation | 12.5 W |
Factory packing quantity | 250 |
Width | 3.25 mm |
Unit weight | 761 mg |
Others include "BD13716S" parts
The following parts include 'BD13716S'
BD13716S Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
BD13716STU
ON Semiconductor
Bipolar (BJT) Transistor NPN 60 V 1.5 A 1.25 W Through Hole TO-126-3
Learn More >
-
- View All Newest Products from Omron