FDD5N50TM_WS
Manufacturer:
Mfr. Part #:
--
Allchips #:
F002-FDD5N50TM_WS-12-A-0000-X-N
Description:
Trans MOSFET N-CH 500V 4A 3-Pin(2+Tab) DPAK T/R
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-252-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 500 V |
Id - continuous drain current | 4 A |
Rds On - Drain-Source On-Resistance | 1.4 Ohms |
Vgs - gate-source voltage | 30 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 20 ns |
Height | 2.39 mm |
Length | 6.73 mm |
Pd - Power Dissipation | 40 W |
Rise Time | 22 ns |
Series | FDD5N50 |
Factory packing quantity | 2500 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 28 ns |
Typical turn-on delay time | 13 ns |
Width | 6.22 mm |
Unit weight | 260.370 mg |
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