FDD8770
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-252-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 25 V |
Id - continuous drain current | 35 A |
Rds On - Drain-Source On-Resistance | 3.3 mOhms |
Vgs - gate-source voltage | 20 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 25 ns |
Height | 2.39 mm |
Length | 6.73 mm |
Pd - Power Dissipation | 115 W |
Rise Time | 12 ns |
Series | FDD8770 |
Factory packing quantity | 2500 |
Transistor type | 1 N-Channel |
Types | MOSFET |
Typical shutdown delay time | 49 ns |
Typical turn-on delay time | 10 ns |
Width | 6.22 mm |
Unit weight | 260.370 mg |
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The following parts include 'FDD8770'
FDD8770 Releted Information
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