FDG6301N_F085
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SC-70-6 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 25 V |
Id - continuous drain current | 220 mA |
Rds On - Drain-Source On-Resistance | 7 Ohms |
Vgs - gate-source voltage | 8 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Dual |
Height | 1.1 mm |
Length | 2 mm |
Pd - Power Dissipation | 300 mW |
Series | FDG6301N_F085 |
Factory packing quantity | 3000 |
Transistor type | 2 N-Channel |
Width | 1.25 mm |
Unit weight | 28 mg |
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