FODM8801BR2V
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Specification
Product Category | 晶体管输出光电耦合器 |
Manufacturer | ON Semiconductor |
RoHS | yes |
Package / case | Miniflat-4 |
Output type | Phototransistor |
Number of channels | 1 Channel |
If - Forward current | 1 mA |
Maximum Collector / Emitter Voltage | 75 V |
Maximum collector current | 30 mA |
Insulation voltage | 3750 Vrms |
Maximum collector / emitter saturation voltage | 0.4 V |
Vf - forward voltage | 1.8 V |
Vr - reverse voltage | 6 V |
Pd - Power Dissipation | 150 mW |
The maximum working temperature | + 125 C |
Minimum working temperature | - 40 C |
Series | FODM8801B |
Trademark | ON Semiconductor / Fairchild |
Collector - emitter breakdown voltage | 130 V |
Configuration | 1 Channel |
Current transfer ratio | 120 % |
Fall time | 5.5 us |
Installation style | SMD/SMT |
Rise Time | 5 us |
Factory packing quantity | 2500 |
Unit weight | 120 mg |
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